Thermal behavior of parasitic resistances of polycrystalline silicon solar cells

Abstract

In this work, we investigate the influence of temperature on the series and shunt resistances of polycrystalline silicon solar cells and then to determine the specific expressions of both parasitic resistances as function of temperature. We have exploited the current-voltage characteristics of polycrystalline silicon solar cell at different temperatures and under constant illumination (1000 W/m2). The obtained results show that the series resistance, Rs , is a positive temperature coefficient type; however, the shunt resistance, Rsh , is a negative temperature coefficient type.