Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

Abstract

Third order optical nonlinear effects relying on the instantaneous Kerr effect are investigated in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film deposited on a thermally oxidized silicon substrate. Ridge waveguides were processed using photolithography and dry etching techniques. From a 1.1 cm long integrated GeSbSe device, self-phase modulation with a maximum nonlinear phase shift of 2.02 π for a peak power of 15.8 W and four-wave mixing with an external conversion efficiency of −42.6 dB for a pump power of 28 mW are demonstrated. Experimental results show a good agreement with calculations.