Corporate Social Responsibility; Mutual Expediency of Transnational Companies and Developing Countries

Abstract

A review of three promising defect characterization techniques ispresented. It is shown how deep level transient spectroscopy canprovide information about energy level, density and capturecross-section of electrically active defects produced by irradiation.Both Doppler and lifetime positron annihilation spectroscopies arereviewed to show how configuration of radiation-induced defects can beidentified by these techniques. Finally, the electron paramagneticresonance technique is briefly reviewed and its usefulness isdemonstrated by describing the investigations of radiation-induced Si-Acenter and positively charged silicon vacancy defect.