Ohmic contacts for moderately resistive p-type InP

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Abstract

A low-resistance (0.1 Ω/mm2) Ohmic contact to moderately resistive (1-10 Ω cm) p-type InP has been developed using Au/Zn/Au metalization.

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Schiavone, L. M., & Pritchard, A. A. (1975). Ohmic contacts for moderately resistive p-type InP. Journal of Applied Physics, 46(1), 452–453. https://doi.org/10.1063/1.322259

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