Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures

Abstract

The effect of boron incorporation on the light emission characteristics of UV BxAlyGa1-x-yN/AlN quantum well (QW) structures was investigated. The internal field rapidly decreases with increasing boron composition and becomes zero at critical boron compositions. As a result, the light intensity of the BAlGaN/AlN QW structure is increased by roughly four times at the critical boron composition of x = 0.03 and y = 0.2. Therefore, in the range of Al composition below 0.7, we expect that UV BAlGaN/AlN QW structures can be used as a high-efficiency light source with a strain reduction of 20-30-, relative to conventional AlGaN/AlN QW structures.