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Ultrawide‐Bandgap Semiconductors: Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors (Adv. Funct. Mater. 9/2019)

  • Xie C
  • Lu X
  • Tong X
  • et al.
Advanced Functional Materials (2019) 29(9)
DOI: 10.1002/adfm.201970057
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Abstract

Solar-blind deep ultraviolet light photodetectors (DUVPDs) have been receiving increasing research interest lately due to their promising application in military surveillance, target detection, and flame detection. In article number 1806006, Feng-Xia Liang, Lin-Bao Luo, Yu-Cheng Wu, and co-workers summarize the recent advances in the development of various DUVPDs based on different kinds of inorganic ultrawide bandgap semiconductors such as Ga2O3, MgxZn1?xO, III-nitride compounds, and diamonds.

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APA

Xie, C., Lu, X., Tong, X., Zhang, Z., Liang, F., Liang, L., … Wu, Y. (2019). Ultrawide‐Bandgap Semiconductors: Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors (Adv. Funct. Mater. 9/2019). Advanced Functional Materials, 29(9). https://doi.org/10.1002/adfm.201970057

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