Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications

4Citations
Citations of this article
2Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized Si chips to NiAu plated Cu surface. The thermal interface material (TIM) based on Ag paste was used for this purpose. It was found that Ag-based TIM allows creating sound joints between NiAu plated Cu and both types of Si chips. The analysis of the joints showed that the adhesion is in the range of 10 MPa and thermal resistance is less than 0.3 K/W. Therefore, the fabricated joints fulfil the mechanical and thermal requirements for this type of assemblies.

Cite

CITATION STYLE

APA

Kisiel, R., Spiewak, P., & Kruszewski, M. J. (2021). Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications. In Proceedings of the International Spring Seminar on Electronics Technology (Vol. 2021-May). IEEE Computer Society. https://doi.org/10.1109/ISSE51996.2021.9467637

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free