Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances

Abstract

Transient behavior in switching operation of junction field-effect transistors (JFETs) is affected by their intrinsic parasitic capacitances. This paper focuses on the switching operation of lateral- type and vertical-type SiC JFETs with considering the charge/discharge behavior of parasitic capacitances in the device. Their device structure decides the voltage dependency of the capacitance characteristics, so that the C -V characteristics governs their switching behavior. © IEICE 2010.