Preparation of hcp-Ni(112̄0) epitaxial thin films on Au(100) single-crystal underlayers

Abstract

Ni epitaxial films with an hcp structure are successfully obtained on Au(100) single-crystal underlayers formed on MgO(100) substrates at temperatures lower than 300 °C by molecular beam epitaxy. With increasing the substrate temperature, the volume ratio of more stable fcc phase increases in the film. The Ni film prepared at 100 °C consists primarily of hcp crystal with the (112̄0) plane parallel to the substrate surface coexisting with a small amount of fcc-Ni(100) crystal. The lattice constant of hcp-Ni crystal is determined as a=0.249 nm, c=0.398 nm, and c/a=1.60. © 2010 IOP Publishing Ltd.