Investigation of the optoelectronic properties of Ti-doped indium tin oxide thin film

Abstract

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 * 10-4 Ω/cm), carrier concentration (4.1 * 1021 cm-3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm-3) with a high figure of merit (81.1 * 10-3 Ω-1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.