Recent Progress in Elemental Tellurium: Properties, Fabrication and Applications

Abstract

Low-dimensional nanomaterials exhibit unique physical and chemical characteristics due to their small scale and specific structures, positioning them as potential candidates for advancing Moore's law. While most low-dimensional nanomaterials are n-type, the progress in creating p-type semiconductors continues to pose a challenge. Tellurium, a group VI element, serves as a p-type semiconductor characterized by a 1D chiral atomic structure, showcasing significant potential for next-generation electronic devices. Since the synthesis of tellurium nanowires (NWs) in the 1970s and the subsequent development of 2D materials, tellurene has attracted considerable interest. Investigating the electrical properties of low-dimensional tellurium nanomaterials has enabled their widespread use in diverse areas such as electronics, optoelectronics, sensors, and energy devices. This review emphasizes the synthesis and phase engineering of tellurium nanostructures, in addition to recent progress in their typical applications. Ultimately, the review concludes by summarizing future research prospects and application possibilities, together with the relevant challenges involved.