Development of compact inductive energy storage pulsed-power generator driven by 13 kV SiC-MOSFET

Abstract

A compact inductive energy storage (IES) pulsed-power generator that is driven by a novel 13 kV silicon carbide (SiC)-MOSFET is developed and molded into a compact modified TO-268. In this article, the switching characteristics required for IES pulsed-power generator development are evaluated. The maximum slew rates at MOSFET turn-on and turn-off are 157 and 129 kV/μs, respectively, at an input voltage of 10 kV. The maximum current flow from the drain to the source terminal is limited to 128 A during short-circuit switching. The on-resistance between the drain and source terminals increases during the SiC-MOSFET’s on state. It increases with the voltage and its minimum value is 1.07 Ω. These characteristics show that the device is suitable for use as an opening switch because of its low on-resistance and rapid large-current cutoff at high operating voltages. The characteristics of an IES pulsed-power generator composed of a SiC-MOSFET, a capacitor, and a pulsed transformer with a turn ratio of 5:15 are also evaluated. The output voltage peak and full width at half maximum reach 31.4 kV and 55 ns, respectively, at a charging voltage of 1100 V. The maximum energy transfer efficiency is 50.2% of the input energy with a load resistance of 2.5 kΩ. The results show that the MOSFET has excellent potential to support the development of a compact plasma generation system that offers better performance pulsed-power generators driven by semiconductor devices.