Evidence of correlated electron hole pairs in dots in asymmetric quantum well structures

Abstract

We introduce the study of InAs quantum dots embedded in an InGaAs quantum well. The quantum dot potential strongly modifies the energy states of the quantum well structure. Hence, the carrier thermodynamics is also influenced. The dependence of the integrated photoluminescence on the excitation power density shows linear dependence with very little deviation from linearity at a high temperature. That result contributes to the strong correlation between the electron and hole pairs, which is attributed to the enhanced confinement provided by the asymmetric quantum well structure. © 2010 IOP Publishing Ltd.