Influence of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy

Abstract

We investigate influence of Mg doping concentration and the thickness of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy. Using simple measurements of light-current characteristics and simulations, two main conclusions are drawn. First one — the Mg dopant is responsible for optical losses, as in the case of the laser diodes grown by metalorganic vapor phase epitaxy. Second one — the low Mg doping causes electrons to overflow through electron blocking layer. Additionally, tunneling is proposed as an escape mechanism of carriers from active region for thin electron blocking layer.