Dielectric property of (TiO2)x-(Ta2O5)1-x thin films

Abstract

(TiO2)x-(Ta2O5)1-x thin films were prepared with radio-frequency magnetron sputtering deposition in this study. The dielectric constant measured from these films appears to critically depend on the amount of TiO2 incorporated into the film and post-anneal condition. The composition dependence was found similar to that reported on (TiO2)x-(Ta2O5)1-x bulk. The highest value of dielectric constant is about 55 for a TiO2 content of 8% and annealing at 800°C. Compared to pure Ta2O5 thin films, significant enhancement in dielectric constant is obtained by adding small quantity of TiO2. © 1998 American Institute of Physics.