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Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays

Applied Physics Letters (2019) 114(16)
DOI: 10.1063/1.5079390
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Abstract

In this work, we studied the low-temperature electrical switching characteristics of a Pt/TiOx/Pt crossbar array. The device exhibits threshold switching behavior upon cooling from 100 K to 65 K and an interesting combination of threshold and memory switchings at temperatures between 65 K and 25 K. The thermally activated changes of these switching characteristics are discussed.

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Alagoz, H. S., Chow, K. H., & Jung, J. (2019). Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays. Applied Physics Letters, 114(16). https://doi.org/10.1063/1.5079390

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