Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation

Abstract

In this study, near surface SiGe and SiGeC alloys with germanium peak composition up to 16 at.% were formed using high-dose ion implantation and subsequent solid phase epitaxial growth. Rutherford backscattering spectroscopy (RBS) channeling spectra and cross-sectional transmission electron microscopy (XTEM) studies showed that high quality Si0.92Ge0.08 and Si0.91Ge0.08C0.01 crystals were formed at the Si surface, while Si0.84Ge0.16 and Si0.82Ge0.16C0.02 layers had extended defects. X-ray diffraction experiments demonstrated that carbon could reduce the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra or XTEM observations. © 1996 American Institute of Physics.