Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Abstract

The performance of an electronic device based on a two-dimensional material is strongly affected by the contact with the metallic electrodes. In this article, we study the electronic properties of two-dimensional MoSSe in contact with a germanene electrode by first-principles calculations. The results show that the contact characteristics are significantly different for the two sides of MoSSe. Notably, for both sides in-plane tensile strain induces a transition from Schottky to Ohmic behavior. Increasing the thickness of MoSSe also leads to an Ohmic contact. We propose an effective route to high performance MoSSe electronic devices.