Technology for III-N heterogeneous mixed-signal electronics

Abstract

III-N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed-signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III-N mixed-signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)-mode AlGaN/GaN HEMTs on GaN-on-silicon substrates. An integrated GaN proportional-to-absolute-temperature (PTAT) voltage source. Peripheral mixed-signal circuits with sensing, protection and control functions could provide optimized performance, increased functionality and enhanced reliability to III-N electronic applications such as high-frequency power amplifiers, power converters and high-temperature electronics. In this paper, the device technologies for implementing III-N mixed-signal integrated circuits (IC) are discussed, and the latest III-N mixed-signal IC prototypes are presented. The figure shows a GaN proportional-to-absolute-temperature (PTAT) voltage source. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.