Conduction mechanisms in memristors based on nanotubular arrays of zirconium oxide

Abstract

Zr/ZrO2-NT/Au memristor structures based on zirconium dioxide nanotubular layer of 3 μm thickness were fabricated using the anodization and magnetron sputtering methods. Current density-electric field curves in full cycles of resistive switching for non-electroformed memristors in different resistance state were studied. It was found that Schottky and Poole-Frenkel emission mechanisms with the domination of the latter were observed for the structures. Dielectric constant values of the anodized ZrO2-NT layer in high and intermediate resistance states were estimated.