Zr/ZrO2-NT/Au memristor structures based on zirconium dioxide nanotubular layer of 3 μm thickness were fabricated using the anodization and magnetron sputtering methods. Current density-electric field curves in full cycles of resistive switching for non-electroformed memristors in different resistance state were studied. It was found that Schottky and Poole-Frenkel emission mechanisms with the domination of the latter were observed for the structures. Dielectric constant values of the anodized ZrO2-NT layer in high and intermediate resistance states were estimated.
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Petrenyov, I. A., Vokhmintsev, A. S., Kamalov, R. V., & Weinstein, I. A. (2019). Conduction mechanisms in memristors based on nanotubular arrays of zirconium oxide. In AIP Conference Proceedings (Vol. 2174). American Institute of Physics Inc. https://doi.org/10.1063/1.5134393