Photosensitive sulphide heterostructures obtained by using Successive Ionic Layer Adsorption and Reaction on planar and profiled substrates

Abstract

The photosensitive heterostructures of ZnS/SnS x were formed by Successive Ionic Layer Adsorption and Reaction method on the nanoporous anodic alumina matrixes, on tantalum oxide nanocolumns and on planar ITO/glass substrate. Investigation of morphology of ZnS/SnS x films layered on the substrates with different surfaces has show which the layering of functional layers has dominated horizontal deposition mechanism. It has been established that the layering of sulfides on anodic alumina proceeds with a higher rate than the layering on ITO/glass. Also ZnS/SnS x heterostructure formed on nanoporous anodic alumina has pronounced interface between layers of sulphide compounds while in the heterostructure on ITO such interface is missing. The layering of ZnS/SnS x heterostructure on the tantalum oxide nanocolumns occurs locally. ZnS/SnS x /ITO/glass structure has the electrical resistance in the order of 140-80 Ohm. During illumination of the ZnS/SnS x /ITO/glass by white light with radiation power about 11 W in structure is formed of photoelectromotive force about 230 mV.