Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001)

Abstract

A reflectance anisotropy spectroscopy (RAS) and low-energy electron diffraction study of the InP(001) surface is presented. The surface was prepared by thermal desorption of an As-P capped epilayer grown by molecular beam epitaxy. RA spectra have been monitored over a spectral range of 1.5-5.5 eV at regular intervals during thermal decapping and annealing up to the point of decomposition (553-973 K). Each of the RA spectra of the surface reconstructions comprise positive (at 2.9 eV) and negative (at 1.8 eV) anisotropies which have been previously associated with P- and In-related bonding, respectively. Unlike other III-V (001) semiconductor surfaces, the evolution of different reconstructions cannot be explained in terms of a change in surface stoichiometry which involves loss of the anion species. In the case of InP(001) the P species contributes to the clean surface reconstruction from the early stages of decapping to the point of decomposition. © 1998 American Institute of Physics.