Low-temperature atomic layer deposition of cobalt oxide thin films using dicobalt hexacarbonyl tert-butylacetylene and ozone

Abstract

We report the deposition of cobalt oxide thin films at 68°C-138°C using alternating injections of dicobalt hexacabonyl tert-butylacetylene (CCTBA) and ozone. The films consisted of Co 3O 4 and CoO, and no impurities were detected. The films were grown in atomic layer deposition mode at 68°C with a growth rate of 0.083 nmcycle, and the exposures of CCTBA and O 3O 2 required for growth rate saturation were 2.5 × 10 6 and 5 × 10 8 L, respectively. Films deposited at low temperatures showed excellent step coverage. However, thermal decomposition of CCTBA followed by ozone oxidation was the dominant process at higher temperatures, especially during long precursor exposures. © 2011 The Electrochemical Society.