Design of complementary metal oxide semiconductor based three stage ring oscillator on the basis of frequency, leakage current and leakage power with and without memristor

Abstract

This paper is based on the results obtained from CMOS based three stage ring oscillator with and without using the memristor. After analyzing, the results obtained from memristor based oscillator are better in terms of frequency, leakage current and leakage power. Also a brief overview about the memristor is given, whose characteristics lies among resistance, inductance and capacitance.