Synthesis and property of tellurium-containing polymer for extreme ultraviolet resist material

Abstract

Synthesis, physical properties, and resist properties of tellurium containing polymer with pendant adamantyl ester groups poly(Re-co-Te)-AD were examined, relevant to the application of resist material for extreme ultraviolet laser photolithography (EUVL) system. A tellurium containing polymer with pendant hydroxyl groups poly(Re-co-Te) was synthesized by the condensation reaction of resorcinol (Re) and tellurium tetrachloride (TeCl4), followed by the condensation reaction with adamantyl bromo acetate to give a corresponding polymer poly(Re-co-Te)-AD. Their physical properties (solubility, film-forming ability, thermal stability) and resist properties (thickness loss property after soaking in 2.38 wt% TMAH aq. solution, out-gassing on EUV exposure tool, and resist sensitivity under EUV exposure tool) were also examined.