HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

Abstract

A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfOx/Ge devices exhibit a 100× larger memory window compared to HfOx MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfOx/Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required.