Study of static dielectric constant of n-type InAs

Abstract

The aim of this study is studying the influence of the donor concentration and temperature on the static dielectric constant (εs) of heavily doped n-type InAs semiconductor. The variation of donor concentration caused an exponential increase of εs at high values of donor density. Our calculations indicated that εs has no meaning at concentration above 3×1016 cm3. Above this value the static dielectric constant diverges so that the polarization catastrophe occurred. The static dielectric constant dependence of resistivity shows that at high resistivity the static dielectric constant appears to be nearly constant and equals the value εs =14.5. This value is equal to the static dielectric constant of InAs host semiconductor without doping. One can expect a divergence of εs at very low resistivity values at which polarization catastrophe can happen. © Maxwell Scientific Organization, 2013.