High-Performance GeSn Photodetector Covering All Telecommunication Bands

Abstract

We report the design and fabrication of a high-speed GeSn normal-incidence p-i-n photodetector. To realize high-speed detection in all telecommunication bands, we optimize the Sn content in the absorption layer, the absorption-layer thickness, and the device size. The responsivity of the 18-μm-diameter device at 1550 nm reaches 0.32 A/W with an extended cutoff wavelength of 1700 nm and a 3-dB bandwidth as high as 28 GHz under-3 V bias, clear open eye diagrams are also obtained under zero bias at 1630 nm. All the results indicate that the device has a significant potential for applications in Si-based optical telecommunication in all telecommunication bands.