A fully integrated dual-band CMOS LNA for IEEE802.16a

Abstract

A fully-integrated, dual-band, high gain, low noise amplifier designed for 802.16a WMAN standard is presented. The targeted frequency bands include un-licensed band UNIT 5 GHz arid licensed band Int'l 10 GHz. Our LNA design adopts wide band input matching scheme with adjustable load to achieve an area-efficient dual-band low noise amplifier. The LNA has also achieved the gain and noise figure of 16.1 dB and 3.6dB at 5GHz, and 1.5.7dB and 7.6dB at .1.0GHz. Additionally, the input reflection coefficient is -7dB and -1.6.5 dB, and the IIP3 is 1.8dBm and l.ldBrn at 5 GHz and .1.0 GHz, respectively. Utilizing the 0.18μm CMOS process, the LNA dissipates 14.4mW using a 1.8V supply voltage. © IEICE 2006.