Abstract
The first laterally-coupled distributed feedback (DFB) laser with firstorder sidewall gratings fabricated by optical interference lithography is experimentally demonstrated. The gratings were first etched into a dielectric mask on the planar top surface of an InP/AlGaInAs laser epiwafer, and then transferred to both sidewalls of a 2 μm deep ridgewaveguide structure using a novel self-aligned process. DFB ridgewaveguide lasers with a cavity length of 650 μm and width of 2.6 μm (with 300 nm gratings on both sidewalls) achieved single longitudinal mode continuous-wave operation, with a sidemode suppression ratio of 37 dB. The threshold current density is 1.7 kA/cm 2 at room temperature, and the slope efficiency is 0.14 mW/mA per facet (uncoated). © The Institution of Engineering and Technology 2013.
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CITATION STYLE
Li, J., & Cheng, J. (2013). Laterally-coupled distributed feedback laser with first-order gratings by interference lithography. Electronics Letters, 49(12), 764–766. https://doi.org/10.1049/el.2013.1520
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