A Dislocation-Crystal Plasticity Simulation on FCC Single Crystal Considering Geometrically Necessary Dislocation Density and Incompatibility

Abstract

In the previous paper, the geometrically necessary (GN) incompatibility is newly defined and a new annihilation term of dislocation pairs due to the dynamic recovery is introduced into an expression of dislocation density. Furthermore, a multiscale model of crystal plasticity is proposed by considering the GN dislocation density and incompatibility. However, details of dislocation-crystal plasticity calculation are not given. In this paper, we explain a method of dislocation-crystal plasticity analysis. A finite element simulation is carried out for an f.c.c. single crystal under plane strain tension. It is numerically predicted that micro shear bands are formed at large strain, and sub-GNBs: small angle tilt boundaries are induced along these bands. Furthermore, the annihilation of dislocation pairs and the increase of dislocation mean free path characterizing stage III of work-hardening are computationally predicted.