Wireless operations for 13.56-MHz band RFID tag using amorphous oxide tfts

Abstract

This paper presents an RFID chip for 13.56-MHz band communication fabricated on a glass substrate by using amorphous In- Ga-Zn-O thin-film transistors. Low driving-voltage logic circuits were achieved with a small Vth, a high field effect mobility of 15 cm2/Vs and "active load" inverters that had small consumption currents. The RFID tag was successively driven by 13.56-MHz wireless input. © IEICE 2011.