Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

Abstract

The current sensing atomic force microscopy (CSAFM) was used to investigate the formation and electric property measurement of nanosized patterns of tantalum oxide. The dimensions of the dots were strongly dependent on the bias applied, scan rate and potential pulse duration. The minimum size nanodots with full width at half maximum of 35 nm was achieved. The dielectric constant of the nanosized Ta2O5 dots was calculated to be 17.8-24.3.