Abstract
Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
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CITATION STYLE
Chen, K., Wan, X., Xie, W., Wen, J., Kang, Z., Zeng, X., … Xu, J. (2015). Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy. Advanced Materials, 27(41), 6431–6437. https://doi.org/10.1002/adma.201502375
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