Resistive switching memory effects in p -type hydrogen-treated CuO nanowire

Abstract

Nanowire (NW)-based resistive switching device offers an ideal platform to develop a nanoscale-memristive device for next-generation memory and computing. The present study developed a p-type hydrogen-treated CuO NW memory device by using hydrogen annealing. The hydrogen-treated CuO NW, which is mainly composed of Cu2O, exhibited a resistive switching non-volatile memory effect and demonstrated low electric-field device operation with ∼3 × 106 V/m and high ON/OFF ratio up to 107. The hole conduction path formation/rapture mechanism based on the redox reaction of CuO was proposed as a resistive switching mechanism.