Investigation on the formation of projections and cracks in anodic oxidation of reaction-sintered silicon carbide

Abstract

Among the present oxidation-assisted polishing (OAP) technique, anodic oxidation is a promising method to process reaction-sintered silicon carbide (RS-SiC) with the assistance of abrasive polishing. Projections and cracks are inevitably formed in the anodic oxidation of RS-SiC for the volume expansion force. Evolvements of the oxide morphologies along with different oxidation voltage and different oxidation time are investigated by scanning electron microscope (SEM). It can be found that when the oxidation time stays the same, size of the projections and cracks on the oxidized RS-SiC sample is gradually enlarged. Meanwhile, when the oxidation voltage stays the same, size of the projections and cracks on the oxidized RS-SiC sample is also enlarged. Details of projections and cracks on the oxidized RS-SiC sample are obtained by the SEM with high magnification. Based on the theoretical derivation, it can be concluded that the formations of projections and cracks depend on the inner volume expansion force and the resultant force generated from other grains. Research on formation of projections and cracks in anodic oxidation of RS-SiC can promote the process level of RS-SiC products.