Abstract
We propose a fully on-chip CMOS temperature sensor in which a sub-threshold (sub-VT) proportional-to-absolute-temperature (PTAT) current element starves a current-controlled oscillator (CCO). Sub-VT design enables ultra-low-power operation of this temperature sensor. However, such circuits are highly sensitive to process variations, thereby causing varying circuit currents from die to die. We propose a bit-weighted current mirror (BWCM) architecture to resist the effect of process-induced variation in the PTAT current. The analog core constituting the PTAT, the CCO, and the BWCM is operational down to 0.2 V supply voltage. A digital block operational at 0.5 V converts the temperature information into a digital code that can be processed and used by other components in a system-on-chip (SoC). The proposed temperature sensor system also supports resolution-power trade-off for Internet-of-things (IoT) applications with different sampling rates and energy needs. The system power consumption is 23 nW and the maximum temperature inaccuracy is +1.5/-1.7°C from 0°C to 100°C with a two-point calibration. The temperature sensor system was designed in a 130 nm CMOS technology and its total area is 250 × 250 µm2.
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CITATION STYLE
Akella Kamakshi, D., Shrivastava, A., & Calhoun, B. H. (2016). A 0.2 V, 23 nW CMOS temperature sensor for ultra-low-power IoT applications. Journal of Low Power Electronics and Applications, 6(2). https://doi.org/10.3390/jlpea6020010
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