Compact model of nanometer STT-MTJ device with scale effect

Abstract

The emergence and growing maturity of spintronics present new ideas and methods for low-power integrated circuit design. Spin-transfer torque magnetic tunnel junction (STT-MTJ) device is one of the spintronic candidates for future promising non-volatile memory. In this paper, a compact model for the STT-MTJ device in nanoscale is presented. By analyzing the influence of the device scale on its properties, the scale effect of the MTJ device is included. The thermal stability factor is trimmed to reflect the error rate of the scale effect of the device. Based on the compact model, the simulation is conducted with different device sizes to present the influence of the scale effect on the device characteristics, including the resistance, the critical current, the switching time, the write error rate, and other characteristics.