Abstract
We present a physics-based model for the double gate MOSFET, which incorporates the effect of the scattering along the channel. The model is based on the McKelvey's flux theory, and properly captures the transition between the different operation regions. The effect of scattering on both the channel conductance and the average velocity near the source end is examined. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Hamid, H. A., Iñíguez, B., Jiménez, D., Marsal, L. F., & Pallarès, J. (2005). A simple model of the nanoscale double gate MOSFET based on the flux method. In Physica Status Solidi C: Conferences (Vol. 2, pp. 3086–3089). https://doi.org/10.1002/pssc.200460744
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