A new type of single carrier conduction rectifier on SiC

Abstract

A new rectifier, called SPND or SNPD (Schottky-PN or -NP junction diode) and inherently showing low on-resistance and unipolar operation, was experimentally demonstrated for the first time on 4H-SiC. It is structured with an n- or a p- region of very low doping that is sandwiched and completely depleted between a Schottky junction and a one-sided PN junction. Either electrons or holes, but not both, contribute to the current conduction process. Clear and sharp rectifying properties are observed over the entire range of applied voltage.