Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

Abstract

3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die.