High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

Abstract

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-background concentration the depletion width exceeds a critical size of about 60 nm, leading to the suppression of band-to-band tunneling currents. Above that critical width the dynamic impedance R0A at 77 K reaches values above 1 kΩ cm2 leading to a Johnson-noise-limited detectivity in excess of 1 × 1012 cm√Hz/W. © 1997 American Institute of Physics.