Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Abstract

Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including transparent thin-film transistors, high-efficiency organic and hybrid organic-inorganic photovoltaic cells, and organic light-emitting diodes. CuSCN combines intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum. Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits of using CuSCN in numerous emerging applications as an alternative to conventional hole-transport materials are also discussed.