Impact of fluorine doping on solution-processed In-Ga-Zn-O thin-film transistors using an efficient aqueous route

Abstract

Simple and facile solution-processed thin-film transistors (TFTs) using metal-oxide semiconductors are promising for producing large-area electronics. To achieve a high-performance solution-processed metal-oxide TFT at a low processing temperature, simple fluorine doping was performed for obtaining a solution-processed metal-oxide semiconductor through efficient metal aqua complexation. The TFTs fabricated using conventional IGZO and fluorine-doped IGZO (IGZO:F) precursors were evaluated. The IGZO:F fabricated TFT demonstrated higher mobility, better switching characteristics, and enhanced overall TFT performance. This simple, lowerature fluorine doping technique improved the solution-processed TFT for future scalable and low-cost TFTs.