Two-terminal current-in-plane giant magnetoresistance devices driven by the spin-orbit torque

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Abstract

Spin valve effect driven by current-induced spin-orbit torques can help to realize electrically controllable and miniaturized two terminal spintronic devices. Here, we show that in a perpendicularly magnetized Fe1-x1 Tbx1/Pt/ Fe1-x2 Tbx2 spin-valve multilayer, spin currents from dual surfaces of the inserted Pt layer can be used to generate spin torques that can separately switch the adjacent ferrimagnetic Fe1-xTbx layers. In a two-terminal device, we further show that the accompanied parallel and anti-parallel magnetization configurations between the two Fe1-xTbx layers can lead to the observation of the current-in-plane giant magnetoresistance (CIP-GMR). Our results demonstrate that the current-induced spin-orbit torques can be implemented into two-terminal spin-torque devices, which can be electrically read out by the CIP-GMR. The present study could be important for designing miniaturized spintronic devices.

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APA

Dong, Y., Xu, T., & Jiang, W. (2021). Two-terminal current-in-plane giant magnetoresistance devices driven by the spin-orbit torque. Applied Physics Letters, 119(19). https://doi.org/10.1063/5.0072336

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