Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime

Abstract

Gated modulation-type radiometric technique for microwave noise measurement is upgraded for convenient investigation of hot-electron energy relaxation and hot-phonon dynamics in a channel with a high-density electron gas. The technique is applied to a GaN-based structure held at 80 and 293 K channel temperature. The results are discussed in terms of hot-phonon effect on hot-electron energy relaxation. The hot-phonon lifetime, estimated from the noise analysis, is compared with the values obtained by more traditional techniques.