A promising two-dimensional channel material: monolayer antimonide phosphorus

Abstract

As the base of modern electronic industry, field-effect transistor (FET) requires the channel material to have both moderate bandgap and high mobility. The recent progresses indicate that few-layer black phosphorus has suitable bandgap and higher mobility than two-dimensional (2D) MoS2, but the experimentally achieved maximal mobility (1000 cm(2)V(-1) s(-1)) is still obviously lower than those of classical semiconductors (1,400 and 5,400 cm(2) V-1 s(-1) for Si and InP). Here, for the first time, we report on monolayer antimonide phosphorus (SbP) as a promising 2D channel material with suitable direct bandgap, which can satisfy the on/off ratio, and with mobility as high as 10(4) cm(2) V-1 s(-1) based on density functional theory calculation. In particular, alpha-Sb1-xPx monolayers possess 0.3-1.6 eV bandgaps when 0.1