Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Abstract

In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.