Bulk etching of silicon wafer and development of a polyimide membrane

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Abstract

Progress in the field of engineering is always dependent on new materials. For quite some time, smart and state of the art systems are seen demanding from a modern point of view. The gas sensing devices are turned into an array of sensors than a single sensor to materialize the concept of electronic nose. The metal oxide gas sensors are actively sensitive to gas species at an elevated temperature of more than 250°C. To achieve this minimum temperature requirement, micro-heaters are developed on a certain substrate which ensures the utilization of heat energy for sensing layer of metal oxide such as tin oxide (SnO2). In this paper, a substrate having good thermal insulation has been discussed. © Published under licence by IOP Publishing Ltd.

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Aslam, M. (2013). Bulk etching of silicon wafer and development of a polyimide membrane. In Journal of Physics: Conference Series (Vol. 439). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/439/1/012029

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